IMT17 transistors rev.a 1/2 general purpose transistor (isolated dual transistors) IMT17 z applications z external dimensions (unit : mm) general purpose small signal amplifier z features 1) two 2sa1036k chips in an smt package. 2) same size as smt3 package, so same mounting machine can be used for both. 3) transistor elements are independent, eliminating interference. 4) high collector current. i c = ? 500ma 5) mounting cost, and area, are reduced by one half. rohm : smt6 eiaj : sc-74 tr 2 tr 1 (4) (5) (6) (3) (2) (1) (1) (2) (3) 0.3 +0.1 ?0.05 1.6 2.8 0.2 + 0.2 ? 0.1 (6) (5) (4) 0.95 0.95 1.9 0.2 2.9 0.2 1.1 +0.2 0.8 0.1 ?0.1 0 to 0.1 0.3 to 0.6 0.15 ?0.06 +0.1 abbreviated symbol: t17 all terminals have same dimensions z structure z packaging specifications epitaxial planar type packaging type taping code IMT17 part no. t110 3000 basic ordering unit (pieces) pnp silicon transistor the following characteristics apply to both tr 1 and tr 2 . z absolute maximum ratings (ta=25 c) parameter symbol limits unit v cbo ?60 v v ceo ?50 v v ebo ?5v i c ?500 ma tj 150 c tstg ?55 to +150 c pd 300(total) mw ? collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature power dissipation ? 200mw per element must not be exceeded. z electrical characteristics (ta=25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. ?60 ?50 ?5 ? ? 120 ? ? ? ? ? ? ? ? ? ? 200 7 ? ? ? ?0.1 ?0.1 390 ?0.6 ? ? vi c = ?100a i c = ?1ma i e = ?100a v= ?30v v= ?4v v ce = ?3v, i c = ?100ma ? v ce = ?5v, i e = 20ma, f= 100mhz i c /i b = ?500ma/ ?50ma v cb = ?10v, i e = 0a, f= 1mhz v v a a ? v mhz pf typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance ? measured using pulse current.
IMT17 transistors rev.a 2/2 z electrical characteristic curves ? 0.2 0 ? 500 ? 200 ? 100 ? 50 ? 20 ? 10 ? 5 ? 2 ? 1 ? 0.5 ? 0.2 ? 0.1 ? 0.4 ? 0.6 ? 0.8 ? 1.0 ? 1.2 ? 1.4 ? 1.6 ? 1.8 ? 2.0 ? 2 .2 v ce = ? 3v collector current : i c (ma) base to emitter voltage : v be (v ) ta=100 c 25 c ? 55 c fig.1 grounded emitter propagation characteristics ?1 ?40 ?80 ?3 0 ?20 ?60 ?100 0 ?2 ?4 ?5 collector current : i c (ma) collector to emitter voltage : v ce (v ) ta = 25 c fig.2 grounded emitter output characteristics ( ) i b =0 a ?0.1ma ?0.2ma ?0.3ma ?0.4ma ?0.5ma ?0.6ma ?0.7ma ?0.8ma ?0.9ma ?1ma ? 200 ? 400 ?10 ?5 0 ? 100 ? 300 ? 500 0 collector current : i c (ma) collector to emitter voltage : v ce ( v) ta=25 c fig.3 grounded emitter output characteristics ( ?) i b = 0 a ?0.5ma ?1.0ma ?1.5ma ?2.0ma ?2.5ma ?3.0ma ?3.5ma ?4.0ma ?4.5ma ?5.0ma 500 1000 200 100 50 20 dc current gain : h fe collector current : i c (ma) ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 100 0 ta=25 c v ce = ?5v ?3v ?1v fig.4 dc current gain vs. collector current ( ) 500 1000 200 100 50 20 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 100 0 dc current gain : h fe collector current : i c (ma) v ce = ?3v fig.5 dc current gain vs. collector current (?) ta=100 c 25 c ?55 c ? 0.1 collector saturation voltage : v ce(sat) (v ) ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 1 ? 0.5 ? 0.2 ? 0.05 ? 0.02 ta=25 c collector current : i c (ma) i c /i b = 50 20 10 fig.6 collector-emitter saturation voltage vs. collector current ( ) ? 0.05 ? 0.03 ? 0.02 ? 0.01 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 100 0 ? 0.5 ? 0.3 ? 0.2 ? 0.1 ? 1.0 l c /l b =10 collector saturation voltage : v ce(sat) (v ) collector current : i c (ma) fig.7 collector-emitter saturation voltage vs. collector current (?) ta=100 c 25 c ?55 c 5 0 0.5 20 50 100 200 500 1000 12 510 emitter current : i e (ma) transition frequency : f t (mhz) ta = 25 c v ce = ?5v fig.8 gain bandwidth product vs. emitter current collector output capacitance : cob (pf ) emitter input capacitance : cib (pf ) collector to base voltage : v cb (v) emitter to base voltage : v eb (v) fig.9 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage ?5 0 ?0.5 ?20 2 5 10 50 100 ?1 ?2 ?5 ?10 20 ta = 25 c f = 1mhz i e = 0a i c = 0a
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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